High-performance visible-blind GaN-based p-i-n photodetectors

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage033507-1en_US
dc.citation.issueNumber3en_US
dc.citation.spage033507-3en_US
dc.citation.volumeNumber92en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorUlker, E.en_US
dc.contributor.authorYelboga, T.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:10:29Z
dc.date.available2016-02-08T10:10:29Z
dc.date.issued2008en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe report high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c -plane sapphire substrates. The dark current of the 200 μm diameter devices was measured to be lower than 20 pA for bias voltages up to 5 V. The breakdown voltages were higher than 120 V. The responsivity of the photodetectors was ∼0.23 AW at 356 nm under 5 V bias. The ultraviolet-visible rejection ratio was 6.7× 103 for wavelengths longer than 400 nm.en_US
dc.identifier.doi10.1063/1.2837645en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23222
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttps://doi.org/10.1063/1.2837645en_US
dc.source.titleApplied Physics Lettersen_US
dc.titleHigh-performance visible-blind GaN-based p-i-n photodetectorsen_US
dc.typeArticleen_US
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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)