X-ray photoelectron spectroscopy for identification of morphological defects and disorders in graphene devices

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buir.contributor.authorSüzer, Şefik
dc.citation.epage041516-5en_US
dc.citation.issueNumber4en_US
dc.citation.spage041516-1en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorAydogan, P.en_US
dc.contributor.authorPolat, E. O.en_US
dc.contributor.authorKocabas, C.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2018-04-12T11:09:05Z
dc.date.available2018-04-12T11:09:05Z
dc.date.issued2016en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe progress in the development of graphene devices is promising, and they are now considered as an option for the current Si-based electronics. However, the structural defects in graphene may strongly influence the local electronic and mechanical characteristics. Although there are well-established analytical characterization methods to analyze the chemical and physical parameters of this material, they remain incapable of fully understanding of the morphological disorders. In this study, x-ray photoelectron spectroscopy (XPS) with an external voltage bias across the sample is used for the characterization of morphological defects in large area of a few layers graphene in a chemically specific fashion. For the XPS measurements, an external +6 V bias applied between the two electrodes and areal analysis for three different elements, C1s, O1s, and Au4f, were performed. By monitoring the variations of the binding energy, the authors extract the voltage variations in the graphene layer which reveal information about the structural defects, cracks, impurities, and oxidation levels in graphene layer which are created purposely or not. Raman spectroscopy was also utilized to confirm some of the findings. This methodology the authors offer is simple but provides promising chemically specific electrical and morphological information.en_US
dc.identifier.doi10.1116/1.4954401en_US
dc.identifier.eissn1944-2807
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/37297
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4954401en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectBias voltageen_US
dc.subjectBinding energyen_US
dc.subjectChemical analysisen_US
dc.subjectCracksen_US
dc.subjectDefectsen_US
dc.subjectGrapheneen_US
dc.subjectGraphene devicesen_US
dc.subjectMechanical propertiesen_US
dc.subjectPhotoelectronsen_US
dc.subjectPhotonsen_US
dc.subjectAnalytical characterizationen_US
dc.subjectChemical and physical parametersen_US
dc.subjectExternal voltage biasen_US
dc.subjectFew layers grapheneen_US
dc.subjectMechanical characteristicsen_US
dc.subjectMorphological defectsen_US
dc.subjectMorphological informationen_US
dc.subjectStructural defecten_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleX-ray photoelectron spectroscopy for identification of morphological defects and disorders in graphene devicesen_US
dc.typeArticleen_US
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