Disorder-free localization around the conduction band edge of crossing and kinked silicon nanowires

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dc.citation.epage064308-8en_US
dc.citation.issueNumber6en_US
dc.citation.spage064308-1en_US
dc.citation.volumeNumber117en_US
dc.contributor.authorKeleş, Ü.en_US
dc.contributor.authorÇakan, A.en_US
dc.contributor.authorBulutay, C.en_US
dc.date.accessioned2016-02-08T10:00:32Z
dc.date.available2016-02-08T10:00:32Z
dc.date.issued2015en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe explore ballistic regime quantum transport characteristics of oxide-embedded crossing and kinked silicon nanowires (NWs) within a large-scale empirical pseudopotential electronic structure framework, coupled to the Kubo-Greenwood transport analysis. A real-space wave function study is undertaken and the outcomes are interpreted together with the findings of ballistic transport calculations. This reveals that ballistic transport edge lies tens to hundreds of millielectron volts above the lowest unoccupied molecular orbital, with a substantial number of localized states appearing in between, as well as above the former. We show that these localized states are not due to the oxide interface, but rather core silicon-derived. They manifest the wave nature of electrons brought to foreground by the reflections originating from NW junctions and bends. Hence, we show that the crossings and kinks of even ultraclean Si NWs possess a conduction band tail without a recourse to atomistic disorder.en_US
dc.identifier.doi10.1063/1.4907585en_US
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11693/22469
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4907585en_US
dc.source.titleJournal of Applied Physicsen_US
dc.subjectConduction bandsen_US
dc.subjectElectronic structureen_US
dc.subjectInterface statesen_US
dc.subjectMolecular orbitalsen_US
dc.subjectNanowiresen_US
dc.subjectQuantum chemistryen_US
dc.subjectQuantum electronicsen_US
dc.subjectSiliconen_US
dc.subjectTransport propertiesen_US
dc.subjectWave functionsen_US
dc.subjectBallistic transportsen_US
dc.subjectConduction band edgeen_US
dc.subjectEmpirical pseudo-potentialen_US
dc.subjectFree Localizationen_US
dc.subjectLowest unoccupied molecular orbitalen_US
dc.subjectQuantum transporten_US
dc.subjectSilicon nanowiresen_US
dc.subjectTransport analysisen_US
dc.subjectBallisticsen_US
dc.titleDisorder-free localization around the conduction band edge of crossing and kinked silicon nanowiresen_US
dc.typeArticleen_US
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