Resonators are used almost in every wireless communications applications and play an important role in the performance of these systems. At radio frequencies, for high performance applications, realization of high-Q resonators is required. Furthermore, in the near future, integration of RF resonators with rest of the system is intended. This thesis describes the design and fabrication of a type of radio-frequency MEMS cavity resonator operating in the frequency range of 2-3 GHz. The fabricated resonators are small in size so that they allow the integration of a whole system on a single-chip. The cavity is realized by selectively removing (etching) silicon substrate using standard MEMS techniques. The resonator is based on creating a low-loss inductor by enclosing the inductor in a metal-coated cavity and then resonating it with either a fixed or tunable high-Q capacitor. In this thesis, formulas for the inductance and the Q-factor of the cavity are derived and a number of resonators are fabricated and measured. The Q-factors of the measured cavities were found to be in the range going up to 25- 30. The obtained results are promising and showed that on-chip resonators with Q-factors higher than 30 can be realized based on this design and fabrication technique at this frequency range.