Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructures

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage5450en_US
dc.citation.issueNumber6en_US
dc.citation.spage5442en_US
dc.citation.volumeNumber19en_US
dc.contributor.authorSari, E.en_US
dc.contributor.authorNizamoglu, S.en_US
dc.contributor.authorChoi, J H.en_US
dc.contributor.authorLee, S J.en_US
dc.contributor.authorBaik, K H.en_US
dc.contributor.authorLee, I. H.en_US
dc.contributor.authorBaek, J. H.en_US
dc.contributor.authorHwang, S M.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:05:58Z
dc.date.available2015-07-28T12:05:58Z
dc.date.issued2011en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those polar ones of the same materials system and similar structure grown on c-plane. Confirmed by their time-resolved photoluminescence measurements and numerical analyses, we show that carrier lifetimes increase with increasing external electric field in nonpolar InGaN/GaN heterostructure epitaxy, whereas exactly the opposite occurs for the polar epitaxy. Moreover, we observe blue-shifting absorption spectra with increasing external electric field as a result of reversed quantum confined Stark effect in these polar structures, while we observe red-shifting absorption spectra with increasing external electric field because of standard quantum confined Stark effect in the nonpolar structures. We explain these opposite behaviors of external electric field dependence with the changing overlap of electron and hole wavefunctions in the context of Fermi's golden rule. (C) 2011 Optical Society of Americaen_US
dc.identifier.doi10.1364/OE.19.005442en_US
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/11693/13364
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.19.005442en_US
dc.source.titleOptics Expressen_US
dc.subjectLight-emitting-diodesen_US
dc.subjectLaser-diodesen_US
dc.subjectGanen_US
dc.subjectWellsen_US
dc.subjectBlueen_US
dc.titleOpposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs. polar InGaN/GaN based quantum heterostructuresen_US
dc.typeArticleen_US
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