Operation of carbon nanotube thin-film transistors at elevated temperatures

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dc.citation.epage2en_US
dc.citation.spage1en_US
dc.contributor.authorÖztürk, Sadien_US
dc.contributor.authorDoğan, Mustafaen_US
dc.contributor.authorAktaş, Özgüren_US
dc.coverage.spatialCollege Park, MD, USA
dc.date.accessioned2016-02-08T12:26:38Z
dc.date.available2016-02-08T12:26:38Z
dc.date.issued2009-12en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 9-11 Dec. 2009
dc.descriptionConference name: 2009 International Semiconductor Device Research Symposium
dc.description.abstractThe authors study the operation of carbon nanotube thin-film transistors (CNT-TFT) at elevated temperatures. Due to the small bandgap of semiconducting carbon nanotubes, CNT-TFTs are not suitable to be developed as high-temperature devices. However, CNT-TFTs will still have to endure elevated temperatures when employed in large-area and flexible electronic applications. The temperature range that can be expected in these applications is well below 100°C. In this work, the authors demonstrate that even at 100°C, CNT-TFT devices are operational but with a reduced ON/OFF ratio. Beyond 100°C, the ON/OFF ratio degrades rapidly.en_US
dc.identifier.doi10.1109/ISDRS.2009.5378102en_US
dc.identifier.urihttp://hdl.handle.net/11693/28666
dc.language.isoEnglishen_US
dc.publisherIEEE
dc.relation.isversionofhttp://dx.doi.org/10.1109/ISDRS.2009.5378102en_US
dc.source.titleInternational Semiconductor Device Research Symposium, ISDRS '09en_US
dc.subjectCarbon nanotubes
dc.subjectThin film transistors
dc.subjectPlasma temperature
dc.subjectCurrent-voltage characteristics
dc.subjectSchottky barriers
dc.subjectVoltage
dc.subjectPlasma measurements
dc.subjectTesting
dc.subjectOxidation
dc.subjectEducational institutions
dc.titleOperation of carbon nanotube thin-film transistors at elevated temperaturesen_US
dc.typeConference Paperen_US
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