Quantum dot light-emitting diode with quantum dots inside the hole transporting layers

Simple item page
buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage6540en_US
dc.citation.issueNumber14en_US
dc.citation.spage6535en_US
dc.citation.volumeNumber5en_US
dc.contributor.authorLeck K.S.en_US
dc.contributor.authorDivayana, Y.en_US
dc.contributor.authorZhao, D.en_US
dc.contributor.authorYoung, X.en_US
dc.contributor.authorAbiyasa, A. P.en_US
dc.contributor.authorMutlugun, E.en_US
dc.contributor.authorGao, Y.en_US
dc.contributor.authorLiu, S.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T11:59:09Z
dc.date.available2015-07-28T11:59:09Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.en_US
dc.identifier.doi10.1021/am400903cen_US
dc.identifier.issn1944-8244
dc.identifier.urihttp://hdl.handle.net/11693/11877
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/am400903cen_US
dc.source.titleACS Applied Materials and Interfacesen_US
dc.subjectQuantum Dotsen_US
dc.subjectHybrid Oledsen_US
dc.subjectExcitonen_US
dc.subjectElectroluminescenceen_US
dc.subjectHole Transport Layeren_US
dc.subjectNoninverted Structureen_US
dc.titleQuantum dot light-emitting diode with quantum dots inside the hole transporting layersen_US
dc.typeArticleen_US
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
10.1021-am400903c.pdf
Size:
1.94 MB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download
Collections
Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)