45-GHz bandwidth-efficiency resonant-cavity-enhanced ITO-Schottky photodiodes
Date
2001
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Source Title
IEEE Photonics Technology Letters
Print ISSN
1041-1135
Electronic ISSN
Publisher
IEEE
Volume
13
Issue
7
Pages
705 - 707
Language
English
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Abstract
High-speed Schottky photodiodes suffer from low efficiency mainly due to the thin absorption layers and the semitransparent Schottky-contact metals. We have designed, fabricated and characterized high-speed and high-efficiency AlGaAs-GaAs-based Schottky photodiodes using transparent indium-tin-oxide Schottky contact material and resonant cavity enhanced detector structure. The measured devices displayed resonance peaks around 820 nm with 75% maximum peak efficiency and an experimental setup limited temporal response of 11 ps pulsewidth. The resulting 45-GHz bandwidth-efficiency product obtained from these devices corresponds to the best performance reported to date for vertically illuminated Schottky photodiodes.
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Keywords
Bandwidth-efficiency , High-speed , Indium-tin-oxide , Photodetect ors , Photodiodes , Resonant-cavity enhancement , Schottky photodiode , Aluminum gallium arsenide , Indium tin oxide , Cavity resonators , Photodetectors , Quantum efficiency , Resonance , Scanning electron microscopy , Schottky barrier diodes , Semiconducting aluminum compounds , Semiconducting gallium arsenide , Semiconducting indium compounds , Photodiodes