Silicon nanowire network metal-semiconductor-metal photodetectors

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage083114-5en_US
dc.citation.issueNumber8en_US
dc.citation.spage083114-1en_US
dc.citation.volumeNumber103en_US
dc.contributor.authorMulazimoglu, E.en_US
dc.contributor.authorCoskun, S.en_US
dc.contributor.authorGunoven, M.en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorTuran, R.en_US
dc.contributor.authorUnalan, H. E.en_US
dc.date.accessioned2015-07-28T11:58:38Z
dc.date.available2015-07-28T11:58:38Z
dc.date.issued2013-08-23en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe report on the fabrication and characterization of solution-processed, highly flexible, silicon nanowire network based metal-semiconductor-metal photodetectors. Both the active part of the device and the electrodes are made of nanowire networks that provide both flexibility and transparency. Fabricated photodetectors showed a fast dynamic response, 0.43 ms for the rise and 0.58 ms for the fall-time, with a decent on/off ratio of 20. The effect of nanowire-density on transmittance and light on/off behavior were both investigated. Flexible photodetectors, on the other hand, were fabricated on polyethyleneterephthalate substrates and showed similar photodetector characteristics upon bending down to a radius of 1 cm.en_US
dc.identifier.doi10.1063/1.4819387en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11742
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLC.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4819387en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAqueous Fluoride Solutionen_US
dc.subjectSolar-cellsen_US
dc.subjectSi nanowiresen_US
dc.subjectPhotovoltaic applicationsen_US
dc.subjectRoom-temperatureen_US
dc.subjectArraysen_US
dc.subjectOrientationen_US
dc.subjectPerformanceen_US
dc.subjectFabricationen_US
dc.subjectMechanismen_US
dc.titleSilicon nanowire network metal-semiconductor-metal photodetectorsen_US
dc.typeArticleen_US
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