Initial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopy

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dc.citation.epage303en_US
dc.citation.issueNumber3en_US
dc.citation.spage295en_US
dc.citation.volumeNumber323en_US
dc.contributor.authorOral, A.en_US
dc.contributor.authorEllialtioglu, R.en_US
dc.date.accessioned2016-02-08T10:51:44Z
dc.date.available2016-02-08T10:51:44Z
dc.date.issued1995en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe have studied the initial stages of strained SiGe alloy growth on the Si(001)-(2 × 1) surface by scanning tunneling microscopy. The Si0.36Ge0.64 alloy was grown on the silicon substrate at various coverages (0.13-3.6 ML) and at different temperatures (∼ 310-470°C). The growth was one dimensional, preferring the direction perpendicular to the underlying silicon dimer rows at low coverages and low temperatures. Anti-phase boundaries were observed to lead multi-layer growth. Strong interaction between the overlayer and the substrate was found to buckle the substrate as well as SiGe dimers. Different growth mechanisms, island formation and step flow, were identified at low and high substrate temperatures. (2 × n) ordering of the strained overlayer was only observed at an intermediate growth temperature (∼ 390°C). © 1995.en_US
dc.identifier.doi10.1016/0039-6028(94)00666-0en_US
dc.identifier.issn0039-6028
dc.identifier.urihttp://hdl.handle.net/11693/25881
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/0039-6028(94)00666-0en_US
dc.source.titleSurface Scienceen_US
dc.subjectEpitaxyen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectSiliconen_US
dc.subjectSilicon-germaniumen_US
dc.subjectAtomsen_US
dc.subjectLattice constantsen_US
dc.subjectScanning tunneling microscopyen_US
dc.subjectSiliconen_US
dc.subjectSilicon alloysen_US
dc.subjectSubstratesen_US
dc.subjectTemperatureen_US
dc.subjectAntiphase boundariesen_US
dc.subjectCritical thicknessen_US
dc.subjectDimersen_US
dc.subjectMultilayer growthen_US
dc.subjectOverlayersen_US
dc.subjectMolecular beam epitaxyen_US
dc.titleInitial stages of SiGe epitaxy on Si(001) studied by scanning tunneling microscopyen_US
dc.typeArticleen_US
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