Metal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interface

Simple item page
buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage40en_US
dc.citation.spage37en_US
dc.citation.volumeNumber224en_US
dc.contributor.authorKumar, M.en_US
dc.contributor.authorNoh, Y.en_US
dc.contributor.authorPolat, K.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorLee, D.en_US
dc.date.accessioned2016-02-08T10:58:02Z
dc.date.available2016-02-08T10:58:02Z
dc.date.issued2015en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractFabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) based on Ga doped ZnO (ZnO:Ga)/graphene is presented in this work. A low dark current of 8.68 nA was demonstrated at a bias of 1 V and a large photo to dark contrast ratio of more than four orders of magnitude was observed. MSM PD exhibited a room temperature responsivity of 48.37 A/W at wavelength of 350 nm and UV-to-visible rejection ratio of about three orders of magnitude. A large photo-to-dark contrast and UV-to-visible rejection ratio suggests the enhancement in the PD performance which is attributed to the existence of a surface plasmon effect at the interface of the ZnO:Ga and underlying graphene layer.en_US
dc.identifier.doi10.1016/j.ssc.2015.10.007en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/26308
dc.language.isoEnglishen_US
dc.publisherPergamon Pressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.ssc.2015.10.007en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. Ga doped ZnOen_US
dc.subjectA. Grapheneen_US
dc.subjectC. Metal-semiconductor-metalen_US
dc.subjectD. Surface plasmonen_US
dc.subjectPhotodetectorsen_US
dc.subjectPhotonsen_US
dc.subjectPlasmonsen_US
dc.subjectZinc oxideen_US
dc.subjectFabrication and characterizationsen_US
dc.subjectMetal-semiconductor-metal uv photodetectorsen_US
dc.subjectSurface plasmon effectsen_US
dc.subjectSurface plasmonsen_US
dc.subjectTemperature responsivityen_US
dc.subjectThree orders of magnitudeen_US
dc.subjectMetalsen_US
dc.titleMetal-semiconductor-metal UV photodetector based on Ga doped ZnO/graphene interfaceen_US
dc.typeArticleen_US
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Metal-semiconductor-metal UV photodetector based on Ga doped ZnO graphene interface.pdf
Size:
567.44 KB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download
Collections
Department of Electrical and Electronics Engineering