Optical studies of molecular beam epitaxy grown GaAsSbN / GaAs single quantum well structures

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dc.citation.epage1116en_US
dc.citation.issueNumber3en_US
dc.citation.spage1113en_US
dc.citation.volumeNumber25en_US
dc.contributor.authorNunna, K.en_US
dc.contributor.authorIyer, S.en_US
dc.contributor.authorWu, L.en_US
dc.contributor.authorBharatan, S.en_US
dc.contributor.authorLi J.en_US
dc.contributor.authorBajaj, K. K.en_US
dc.contributor.authorWei, X.en_US
dc.contributor.authorSenger, R. T.en_US
dc.date.accessioned2016-02-08T10:14:00Z
dc.date.available2016-02-08T10:14:00Z
dc.date.issued2007en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractIn this work, the authors present a systematic study on the variation of the structural and the optical properties of GaAsSbNGaAs single quantum wells (SQWs) as a function of nitrogen concentration. These SQW layers were grown by the solid source molecular beam epitaxial technique. A maximum reduction of 328 meV in the photoluminescence (PL) peak energy of GaAsSbN was observed with respect to the reference GaAsSb QW. 8 K and RT PL peak energies of 0.774 eV (FWHM of ∼25 meV) and 0.729 eV (FWHM of ∼67 meV) (FWHM denotes full width at half maximum) corresponding to the emission wavelengths of 1.6 and 1.7 μm, respectively, have been achieved for a GaAsSbN SQW of N∼1.4%. The pronounced S -curve behavior of the PL spectra at low temperatures is a signature of exciton localization, which is found to decrease from 16 to 9 meV with increasing N concentration of 0.9%-2.5%. The diamagnetic shift of 13 meV observed in the magnetophotoluminescence spectra of the nitride sample with N∼1.4% is smaller in comparison to the value of 28 meV in the non-nitride sample, indicative of an enhancement in the electron effective mass in the nitride QWs. Electron effective mass of 0.065 mo has been estimated for a SQW with N∼1.4% using the band anticrossing model.en_US
dc.identifier.doi10.1116/1.2720860en_US
dc.identifier.issn1071-1023
dc.identifier.urihttp://hdl.handle.net/11693/23442
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.2720860en_US
dc.source.titleJournal of Vacuum Science and Technology B : Microelectronics and Nanometer Structuresen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectNitrogenen_US
dc.subjectOptical propertiesen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectDiamagnetic shiften_US
dc.subjectMagnetophotoluminescenceen_US
dc.subjectNitrogen concentrationen_US
dc.subjectSingle quantum well structuresen_US
dc.subjectSemiconductor quantum wellsen_US
dc.titleOptical studies of molecular beam epitaxy grown GaAsSbN / GaAs single quantum well structuresen_US
dc.typeArticleen_US
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