Enhancement in c-Si solar cells using 16 nm InN nanoparticles

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.issueNumber5en_US
dc.citation.volumeNumber3en_US
dc.contributor.authorChowdhury, F. I.en_US
dc.contributor.authorAlnuaimi, A.en_US
dc.contributor.authorAlkis, S.en_US
dc.contributor.authorOrtaç, B.en_US
dc.contributor.authorAktürk, S.en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorDietz, N.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorNayfeh, A.en_US
dc.date.accessioned2019-02-08T08:57:23Z
dc.date.available2019-02-08T08:57:23Z
dc.date.issued2016-05en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractIn this work, 16 nm indium nitride (InN) nanoparticles (NPs) are used to increase the performance of thin-film c-Si HIT solar cells. InN NPs were spin-coated on top of an ITO layer of c-Si HIT solar cells. The c-Si HIT cell is a stack of 2 μm p type c-Si, 4–5 nm n type a-Si, 15 nm n+ type a-Si and 80 nm ITO grown on a p+ type Si substrate. On average, short circuit current density (Jsc) increases from 19.64 mA cm−2 to 21.54 mA cm−2 with a relative improvement of 9.67% and efficiency increases from 6.09% to 7.09% with a relative improvement of 16.42% due to the presence of InN NPs. Reflectance and internal/external quantum efficiency (IQE/EQE) of the devices were also measured. Peak EQE was found to increase from 74.1% to 81.3% and peak IQE increased from 93% to 98.6% for InN NPs coated c-Si HIT cells. Lower reflection of light due to light scattering is responsible for performance enhancement between 400–620 nm while downshifted photons are responsible for performance enhancement from 620 nm onwards.en_US
dc.identifier.doi10.1088/2053-1591/3/7/079502en_US
dc.identifier.eissn2053-1591
dc.identifier.urihttp://hdl.handle.net/11693/49128
dc.language.isoEnglishen_US
dc.publisherIOP Publishingen_US
dc.relation.isversionofhttps://doi.org/10.1088/2053-1591/3/7/079502en_US
dc.source.titleMaterials Research Expressen_US
dc.titleEnhancement in c-Si solar cells using 16 nm InN nanoparticlesen_US
dc.typeArticleen_US
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