Low damage etching of GaN surfaces via bias-assisted photoenhanced electrochemical oxidation in deionized water

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage633en_US
dc.citation.issueNumber6en_US
dc.citation.spage629en_US
dc.citation.volumeNumber36en_US
dc.contributor.authorAlptekin, E.en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.contributor.authorAktas, O.en_US
dc.date.accessioned2016-02-08T10:14:06Z
dc.date.available2016-02-08T10:14:06Z
dc.date.issued2007en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractProperties of GaN surfaces etched by bias-assisted photoenhanced electrochemical (PEC) oxidation in deionized water and subsequent removal of the oxidized material are investigated using Schottky diodes fabricated on etched surfaces. It is demonstrated that with a short anneal at 700°C after removal of the oxide, it is possible to obtain a low damage surface with near ideal breakdown and capacitance-voltage (C-V) characteristics. Good quality Schottky diodes are fabricated on surfaces etched as much as 120 nm. The undercutting of masked surfaces is also demonstrated. Thus, given the band-gap selectivity, the possibility to undercut masked areas, and the low damage surfaces that can be obtained, the process demonstrated in this paper is suitable for use in fabrication of self-aligned GaN bipolar transistor structures.en_US
dc.identifier.doi10.1007/s11664-006-0009-0en_US
dc.identifier.eissn1543-186X
dc.identifier.issn0361-5235
dc.identifier.urihttp://hdl.handle.net/11693/23449
dc.language.isoEnglishen_US
dc.publisherSpringer New York LLCen_US
dc.relation.isversionofhttp://doi.org/10.1007/s11664-006-0009-0en_US
dc.source.titleJournal of Electronic Materialsen_US
dc.subjectElectrochemical oxidationen_US
dc.subjectGaN etchingen_US
dc.subjectSelf-aligned processen_US
dc.subjectBand gap selectivityen_US
dc.titleLow damage etching of GaN surfaces via bias-assisted photoenhanced electrochemical oxidation in deionized wateren_US
dc.typeArticleen_US
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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)