The sub-terahertz region absorption of sputter deposited nanoscale TiAlV thin films

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buir.contributor.authorÖksüzoğlu, Ramis Mustafa
buir.contributor.orcidÖksüzoğlu, Ramis Mustafa|0000-0002-0574-5170
dc.citation.epage11
dc.citation.issueNumber113305
dc.citation.spage1
dc.citation.volumeNumber135
dc.contributor.authorÖksüzoğlu, Ramis Mustafa
dc.contributor.authorAltan, Hakan
dc.contributor.authorAbdüsselamoğlu, Mehmet Sait
dc.contributor.authorÖzkan, Özlem Başak
dc.contributor.authorBayram, Yasin
dc.contributor.authorChakar, Erkan Syuleyman
dc.date.accessioned2024-03-26T07:22:11Z
dc.date.available2024-03-26T07:22:11Z
dc.date.issued2022-12-05
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.description.abstractAbsorption in the sub-terahertz region in TiAlV thin films with their potential usage in detectors and plasmonic applications is a crucial point for device performance. This work aims to investigate the thickness-dependent evolution of the sub-terahertz region absorption, electrical resistivity in TiAlV thin films deposited by DC magnetron sputtering and to study the structure-property correlation. For structural analyses, X-ray diffraction and transmission electron microscopy techniques have been used. In different deposition conditions, TiAlV thin films indicating the β-Ti phase with anisotropic growth and the hexagonal AlTi3 phase with equiaxial growth have been produced. High resistivity values have been measured in films with the AlTi3 phase. In all TiAlV thin films with different structures, thickness dependent resistivity change in the range 3–23 nm, whereby a strong increase in electrical resistivity with decreasing film thickness have been observed below a thickness of 6 nm. The sub-terahertz absorption increases with increasing film thickness. The highest terahertz region absorption has been found for the films with the β-Ti phase and anisotropic growth also indicating higher electrical conductivity, which favors absorption sensitive applications in the terahertz region. © 2022 Elsevier B.V.
dc.embargo.release2024-12-05
dc.identifier.doi10.1016/j.optmat.2022.113305
dc.identifier.eissn1873-1252
dc.identifier.issn0925-3467
dc.identifier.urihttps://hdl.handle.net/11693/115116
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.isversionofhttps://doi.org/10.1016/j.optmat.2022.113305
dc.rightsCC BY 4.0 DEED (Attribution 4.0 International)
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.source.titleOptical Materials
dc.subjectElectrical properties
dc.subjectNanoscale metal alloy thin films
dc.subjectSputtering
dc.subjectStructural properties
dc.subjectSub-thz region
dc.subjectThz absorption
dc.titleThe sub-terahertz region absorption of sputter deposited nanoscale TiAlV thin films
dc.typeArticle
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