Facet passivation process of high-power laser diodes by plasma cleaning and ZnO film

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buir.contributor.authorDemir, Abdullah
buir.contributor.orcidDemir, Abdullah|0000-0003-4678-0084
dc.citation.epage9en_US
dc.citation.spage1en_US
dc.citation.volumeNumber596en_US
dc.contributor.authorLan, Y.
dc.contributor.authorYang, G.
dc.contributor.authorZhao, Y.
dc.contributor.authorLiu, Y.
dc.contributor.authorDemir, Abdullah
dc.date.accessioned2023-02-14T13:31:44Z
dc.date.available2023-02-14T13:31:44Z
dc.date.issued2022-09-15
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractPassivation of dangling bonds at the cleaved mirror facet and its durability are fundamental features of semiconductor lasers to obtain reliable operation with a long device lifetime. The high non-radiative recombination activity of the surface states needs to be controlled to prevent the Fermi level pinning before the deposition of mirror coating materials. Here, we report the incorporation of plasma cleaning of the facet and ZnO film as a passivation layer for the fabrication of high-power semiconductor lasers. The Argon plasma cleaning process was investigated to eliminate surface contamination without damaging the cavity surface. The ZnO passivation films were systematically studied by varying the chamber pressure and sputtering power of the radio frequency (RF) sputter coating process. We obtained homogeneous and dense ZnO films with high surface quality and optical absorption coefficient of zero. By incorporating the optimum plasma cleaning and passivation layer parameters, GaAs-based laser devices with significantly improved catastrophic optical mirror damage (COMD) power were achieved. COMD threshold was increased from 11.9 W to 20.7 W. The life test results demonstrate no failure for facet cleaned and passivated devices for more than 500 h, confirming the long-term effectiveness of the process for actual device integration.en_US
dc.identifier.doi10.1016/j.apsusc.2022.153506en_US
dc.identifier.eissn1873-5584
dc.identifier.issn0169-4332
dc.identifier.urihttp://hdl.handle.net/11693/111277
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttps://dx.doi.org/10.1016/j.apsusc.2022.153506en_US
dc.source.titleApplied Surface Scienceen_US
dc.subjectFacet passivationen_US
dc.subjectHigh reliabilityen_US
dc.subjectLaser diodesen_US
dc.titleFacet passivation process of high-power laser diodes by plasma cleaning and ZnO filmen_US
dc.typeArticleen_US
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