The growth, fabrication and characterization of high performance AI(formula)Ga(formula)N metal-semiconductor-metal photodiodes

Simple item page
buir.advisorÖzbay, Ekmel
dc.contributor.authorBütün, Serkan
dc.date.accessioned2016-07-01T11:07:24Z
dc.date.available2016-07-01T11:07:24Z
dc.date.issued2006
dc.departmentDepartment of Physicsen_US
dc.descriptionCataloged from PDF version of article.en_US
dc.description.abstractHigh performance UV photodetectors have attracted unwarranted attention for various applications, such as in military, telecommunication, and biological imaging, as an AlxGa1-xN material system is also rather suitable for such applications. Its direct band gap covers the spectrum from 200 nm to 360 nm by way of changing the Al concentration in the compound. In this present thesis, the design and growth of an Al0.75Ga0.25N template on sapphire substrate and a deep-UV photodiode with a cut off wavelength of 229 nm that was fabricated on the Al0.75Ga0.25N template is presented. A responsivity of 0.53 A/W was attained corresponding to a detectivity of 1.64 × 1012 cmHz 1/2/W at a 50 V bias and 222 nm UV light illumination. The UV/VIS rejection ratio of seven orders of magnitude was achieved from the fabricated devices. The second work that was conducted in this thesis was the growth of a semiinsulating (SI-) GaN template. We also fabricated visible-blind photodetectors on this semi-insulating (SI-) GaN template. Furthermore, we fabricated identical samples on a regular GaN template in order to investigate any possible i improvement. The improvement found was obvious in terms of dark current. A dark current density of 1.96 × 10-10 A/cm2 at a 50 V bias voltage for an SI-GaN photodetector was obtained, which is four orders of magnitude lower than devices on a regular GaN template. Devices on an SI-GaN had very high detectivity, and therefore, SI-GaN was used for low level power detection. The photogenerated current was well above the dark current that was under the illumination of just a few picowatts of UV light.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityBütün, Serkanen_US
dc.format.extentx, 57 leaves, graphicsen_US
dc.identifier.itemidBILKUTUPB100061
dc.identifier.urihttp://hdl.handle.net/11693/29858
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhotodetectoren_US
dc.subjectPhotodiodeen_US
dc.subjectGaNen_US
dc.subjectAlGaNen_US
dc.subjectMetal-semiconductormetalen_US
dc.subjectSemi-insulatingen_US
dc.subject.lccTK8312 .B88 2006en_US
dc.subject.lcshPhotodiodes.en_US
dc.titleThe growth, fabrication and characterization of high performance AI(formula)Ga(formula)N metal-semiconductor-metal photodiodesen_US
dc.typeThesisen_US
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
0003146.pdf
Size:
1.57 MB
Format:
Adobe Portable Document Format
Description:
Full printable version
Download
Collections
Dept. of Physics - Master's degree