Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis

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dc.citation.epage3910en_US
dc.citation.issueNumber17en_US
dc.citation.spage3908en_US
dc.citation.volumeNumber85en_US
dc.contributor.authorSevik, C.en_US
dc.contributor.authorBulutay, C.en_US
dc.date.accessioned2016-02-08T10:25:42Z
dc.date.available2016-02-08T10:25:42Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractGallium nitride can offer a high-power alternative for millimeter-wave Gunn oscillators. Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of efficiency and harmonic enhancement in n-type GaN Gunn diodes is undertaken. First, the effects of doping notch/mesa and its position within the active channel are investigated which favors a doping notch positioned next to cathode. It is then observed that the width of the notch can be optimized to enhance the higher-harmonic operation without degrading its performance at the fundamental mode. Next, the effects of dc bias and channel doping density are investigated. Both of these have more significant effects on the higher-harmonic efficiency than the fundamental one. The lattice temperature is observed to have almost no influence up to room temperature but severely degrades the performance above room temperature. As a general behavior, the variations of temperature, channel doping, and the notch width primarily affect the phase angle between the current and voltage wave forms rather than the amplitude of oscillations. Finally, the physical origin of these Gunn oscillations is sought which clearly indicates that the intervalley scattering mechanism is responsible rather than the Γ valley nonparabolicity or the effective mass discrepancy between the Γ and the lowest satellite valleys.en_US
dc.identifier.doi10.1063/1.1812376en_US
dc.identifier.eissn1520-8842
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/24208
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.1812376en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectDegradationen_US
dc.subjectDoping (additives)en_US
dc.subjectElectric currentsen_US
dc.subjectGallium compoundsen_US
dc.subjectMonte Carlo methodsen_US
dc.subjectOptimizationen_US
dc.subjectScatteringen_US
dc.subjectVoltage measurementen_US
dc.subjectEMC simulationsen_US
dc.subjectGunn oscillationsen_US
dc.subjectHarmonic enhancementsen_US
dc.subjectTransistor applicationsen_US
dc.subjectDiodesen_US
dc.titleEfficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysisen_US
dc.typeArticleen_US
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