Spectrally selective ultrathin photodetectors using strong interference in nanocavity design

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buir.contributor.authorGhobadi, Amir
buir.contributor.authorDemirağ, Yiğit
buir.contributor.authorHajian, Hodjat
buir.contributor.authorToprak, Ahmet
buir.contributor.authorBütün, Bayram
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage928en_US
dc.citation.issueNumber6en_US
dc.citation.spage925en_US
dc.citation.volumeNumber40en_US
dc.contributor.authorGhobadi, Amiren_US
dc.contributor.authorDemirağ, Yiğiten_US
dc.contributor.authorHajian, Hodjaten_US
dc.contributor.authorToprak, Ahmeten_US
dc.contributor.authorBütün, Bayramen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2020-02-06T06:44:10Z
dc.date.available2020-02-06T06:44:10Z
dc.date.issued2019
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThinning the active layer's thickness of the semiconductor down to a level comparable with the carriers' diffusion length while keeping its absorption high is an ultimate goal to boost the performance of optoelectronic devices. Strong interference in multilayer structures is one of the promising and practical solutions owing to their simple and large-scale compatible fabrication route. These nanocavity designs not only provide near unity absorption, but they can also be designed in a way that a spectrally selective absorption response can be achieved. In this letter, we will demonstrate the functionality of a metal- insulator-semiconductor (MIS) cavity to obtain spectrally selective ultrathin photodetectors. To prove our theoretical and numerical findings, a 4-nm-thick amorphous silicon (aSi)-based MIS cavity is designed, fabricated, and characterized. The experimental results show that the optimized cavity design can act as an efficient visible blind ultraviolet (UV) photodetector. The proposed design shows the responsivity values of 120 and 2.5 mA/W in the UV (λ = 350 nm) and visible (λ = 500 nm) regions, respectively.en_US
dc.identifier.doi10.1109/LED.2019.2910064en_US
dc.identifier.eissn1558-0563
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/53109
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/LED.2019.2910064en_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.subjectOptical devicesen_US
dc.subjectPerfect absorbersen_US
dc.subjectPhotodetectorsen_US
dc.subjectSemiconductor metamaterialsen_US
dc.titleSpectrally selective ultrathin photodetectors using strong interference in nanocavity designen_US
dc.typeArticleen_US
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