The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage1194en_US
dc.citation.spage1177en_US
dc.citation.volumeNumber111en_US
dc.contributor.authorSheremet, Volodymyren_US
dc.contributor.authorGenç, M.en_US
dc.contributor.authorElçi, M.en_US
dc.contributor.authorSheremet, Ninaen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorAltuntaş, İsmailen_US
dc.contributor.authorDing, Kaien_US
dc.contributor.authorAvrutin, Vitaliyen_US
dc.contributor.authorÖzgür, Ümiten_US
dc.contributor.authorMorkoç, Hadisen_US
dc.date.accessioned2018-04-12T11:10:04Z
dc.date.available2018-04-12T11:10:04Z
dc.date.issued2017en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe effect of a transparent ITO current spreading layer on electrical and light output properties of blue InGaN/GaN light emitting diodes (LEDs) is discussed. When finite conductivity of ITO is taken into account, unlike in previous models, the topology of LED die and contacts are shown to significantly affect current spreading and light output characteristics in top emitting devices. We propose an approach for calculating the current transfer length describing current spreading. We show that an inter-digitated electrode configuration with distance between the contact pad and the edge of p-n junction equal to transfer length in the current spreading ITO layer allows one to increase the optical area of LED chip, as compared to the physical area of the die, light output power, and therefore, the LED efficiency for a given current density. A detailed study of unpassivated LEDs also shows that current transfer lengths longer than the distance between the contact pad and the edge of p-n junction leads to increasing surface leakage that can only be remedied with proper passivation.en_US
dc.embargo.release2019-11-01en_US
dc.identifier.doi10.1016/j.spmi.2017.08.026en_US
dc.identifier.issn0749-6036
dc.identifier.urihttp://hdl.handle.net/11693/37321
dc.language.isoEnglishen_US
dc.publisherAcademic Pressen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.spmi.2017.08.026en_US
dc.source.titleSuperlattices and Microstructuresen_US
dc.subjectCurrent spreadingen_US
dc.subjectIndium tin oxideen_US
dc.subjectInGaN/GaN multiple quantum wellen_US
dc.subjectLEDen_US
dc.titleThe role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodesen_US
dc.typeArticleen_US
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