Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage4969en_US
dc.citation.issueNumber4en_US
dc.citation.spage4958en_US
dc.citation.volumeNumber21en_US
dc.contributor.authorZhang, Z.-H.en_US
dc.contributor.authorTan, S.T.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorZheng, K.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorSun X.W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2016-02-08T09:40:29Z
dc.date.available2016-02-08T09:40:29Z
dc.date.issued2013en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThis work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN (PNPNP-GaN) current spreading layers in p-GaN. Each thin n-GaN layer sandwiched in the PNPNP-GaN structure is completely depleted due to the built-in electric field in the PNPNP-GaN junctions, and the ionized donors in these n-GaN layers serve as the hole spreaders. As a result, the electrical performance of the proposed device is improved and the optical output power and EQE are enhanced. © 2013 Optical Society of America.en_US
dc.identifier.doi10.1364/OE.21.004958en_US
dc.identifier.issn10944087
dc.identifier.urihttp://hdl.handle.net/11693/21065
dc.language.isoEnglishen_US
dc.publisherOptical Society of American (OSA)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.21.004958en_US
dc.source.titleOptics Expressen_US
dc.subjectGallium nitrideen_US
dc.subjectBuilt-in electric fieldsen_US
dc.subjectCurrent spreadingen_US
dc.subjectElectrical performanceen_US
dc.subjectExternal quantum efficiencyen_US
dc.subjectInGaN/GaNen_US
dc.subjectIngan/gan lightemitting diodes (LEDs)en_US
dc.subjectIonized donorsen_US
dc.subjectOptical output poweren_US
dc.subjectTheoretical studyen_US
dc.subjectLight emitting diodesen_US
dc.subjectgalliumen_US
dc.subjectgallium nitrideen_US
dc.subjectindiumen_US
dc.subjectindium nitrideen_US
dc.subjectgalliumen_US
dc.subjectindiumen_US
dc.subjectchemistryen_US
dc.subjectdevice failure analysisen_US
dc.subjectdevicesen_US
dc.subjectelectric conductivityen_US
dc.subjectequipment designen_US
dc.subjectilluminationen_US
dc.subjectsemiconductoren_US
dc.subjectarticleen_US
dc.subjectchemistryen_US
dc.subjectequipmenten_US
dc.subjectequipment failureen_US
dc.subjectilluminationen_US
dc.subjectElectric Conductivityen_US
dc.subjectEquipment Designen_US
dc.subjectEquipment Failure Analysisen_US
dc.subjectGalliumen_US
dc.subjectIndiumen_US
dc.subjectLightingen_US
dc.subjectSemiconductorsen_US
dc.subjectElectric Conductivityen_US
dc.subjectEquipment Designen_US
dc.subjectEquipment Failure Analysisen_US
dc.subjectGalliumen_US
dc.subjectIndiumen_US
dc.subjectLightingen_US
dc.subjectSemiconductorsen_US
dc.titleImproved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layeren_US
dc.typeArticleen_US
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Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)