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      Low-threshold lasing from copper-doped CdSe colloidal quantum wells

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      Embargo Lift Date: 2022-05-04
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      Author(s)
      Yu, J.
      Sharma, M.
      Li, M.
      Delikanlı, Savaş
      Sharma, A.
      Taimoor, M.
      Altintas, Y.
      McBride, J. R.
      Kusserow, T.
      Sum, T.
      Demir, Hilmi Volkan
      Date
      2021-05-04
      Source Title
      Laser & Photonics Reviews
      Print ISSN
      1863-8880
      Electronic ISSN
      1863-8899
      Publisher
      Wiley
      Volume
      15
      Issue
      6
      Pages
      2100034-1 - 2100034-7
      Language
      English
      Type
      Article
      Item Usage Stats
      31
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      3
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      Abstract
      Transition metal doped colloidal nanomaterials (TMDCNMs) have recently attracted attention as promising nano-emitters due to dopant-induced properties. However, despite ample investigations on the steady-state and dynamic spectroscopy of TMDCNMs, experimental understandings of their performance in stimulated emission regimes are still elusive. Here, the optical gain properties of copper-doped CdSe colloidal quantum wells (CQWs) are systemically studied with a wide range of dopant concentration for the first time. This work demonstrates that the amplified spontaneous emission (ASE) threshold in copper-doped CQWs is a competing result between the biexciton formation, which is preferred to achieve population inversion, and the hole trapping which stymies the population inversion. An optimum amount of copper dopants enables the lowest ASE threshold of ≈7 µJ cm−2, about 8-fold reduction from that in undoped CQWs (≈58 µJ cm−2) under sub-nanosecond pulse excitation. Finally, a copper-doped CQW film embedded in a vertical cavity surface-emitting laser (VCSEL) structure yields an ultralow lasing threshold of 4.1 µJ cm−2. Exploiting optical gain from TMDCNMs may help to further boost the performance of colloidal-based lasers.
      Keywords
      Amplified spontaneous emission
      Colloidal quantum wells
      Copper doping
      Lasing
      Vertical cavity surface-emitting lasers
      Permalink
      http://hdl.handle.net/11693/77549
      Published Version (Please cite this version)
      https://doi.org/10.1002/lpor.202100034
      Collections
      • Department of Electrical and Electronics Engineering 3863
      • Department of Physics 2485
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
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