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      A novel hot carrier-induced blue light-emitting device

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      Embargo Lift Date: 2023-05-24
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      Author(s)
      Mutlu, S.
      Erol, A.
      Arslan, Engin
      Özbay, Ekmel
      Lisesivdin, S. B.
      Tiras, E.
      Date
      2021-05-24
      Source Title
      Journal of Alloys and Compounds
      Print ISSN
      0925-8388
      Electronic ISSN
      1873-4669
      Publisher
      Elsevier
      Volume
      881
      Pages
      1 - 7
      Language
      English
      Type
      Article
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      Abstract
      In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is investigated. A heterojunction structure is designed based on an active InGaN quantum well placed in the n-type GaN region sandwiched by the n- and p-type GaN layers. The four quantum well structure of an InGaN/GaN heterojunction where the Indium ratio is 0.16 has been grown via Metal-Organic Chemical Vapor Deposition. In order to create an anisotropic potential distribution of the heterojunction, it is aimed to fabricate TH-HELLISH-GaN device in Top-Hat HELLISH (THH) geometry for four contacts with separate n- and p-channels. High-speed I-V measurements of the device reveal an Ohmic characteristic at both polarities of the applied voltage. Integrated EL measurements reveal the threshold of the applied electric field at around 0.25 kV/cm. The emission wavelength of the device is around 440 ± 1 nm at room temperature.
      Keywords
      Top-Hat HELLISH
      InGaN/GaN multi quantum well
      Field effect
      XOR logic
      Blue light
      Permalink
      http://hdl.handle.net/11693/77458
      Published Version (Please cite this version)
      https://doi.org/10.1016/j.jallcom.2021.160511
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Nanotechnology Research Center (NANOTAM) 1179
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