• About
  • Policies
  • What is open access
  • Library
  • Contact
Advanced search
      View Item 
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      •   BUIR Home
      • Scholarly Publications
      • Nanotechnology Research Center (NANOTAM)
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.

      Determination of scattering mechanisms in AlInGaN/GaN heterostructures grown on sapphire substrate

      Thumbnail
      Embargo Lift Date: 2023-01-27
      View / Download
      4.7 Mb
      Author(s)
      Sonmez, F.
      Arslan, Engin
      Ardali, S.
      Tiras, E.
      Özbay, Ekmel
      Date
      2021-01-27
      Source Title
      Journal of Alloys and Compounds
      Print ISSN
      0925-8388
      Electronic ISSN
      1873-4669
      Publisher
      Elsevier
      Volume
      864
      Pages
      1 - 9
      Language
      English
      Type
      Article
      Item Usage Stats
      81
      views
      3
      downloads
      Abstract
      The electron mobility limited by different scattering mechanisms in the quaternary AlInGaN alloy grown on a GaN layer is investigated with the classical Hall measurement, which is performed at a temperature range of 12 and 350 K and a magnetic field of B = 0.51 T. The effect of the thickness and alloy composition of the quaternary AlInGaN layer on the mobility is also determined. The experimentally determined temperature-dependent Hall mobility was compared with mobility calculated by using Matthiessen's rule. The main scattering mechanisms, including acoustic phonon scattering (piezoelectric and deformation potential), polar optical phonon scattering, alloy disorder scattering, interface roughness scattering, ionized impurity scattering, dislocation scattering, background impurity scattering, were used in the calculations for all temperatures. The results show that the dominant scattering mechanisms, depending on the investigated sample, are the interface roughness scattering and alloy disorder scattering at almost all temperatures. At a low-temperature, mobility is limited by ionized impurity scattering. High-temperature mobility is limited by polar optical phonon scattering. Furthermore, our results suggest that the thickness and alloy composition of the quaternary AlInGaN layer should be optimized for better transport properties.
      Keywords
      Quaternary AlInGaN layer
      Scattering mechanisms
      Hall effect measurement
      Permalink
      http://hdl.handle.net/11693/77456
      Published Version (Please cite this version)
      https://doi.org/10.1016/j.jallcom.2021.158895
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Nanotechnology Research Center (NANOTAM) 1179
      Show full item record

      Browse

      All of BUIRCommunities & CollectionsTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCoursesThis CollectionTitlesAuthorsAdvisorsBy Issue DateKeywordsTypeDepartmentsCourses

      My Account

      Login

      Statistics

      View Usage StatisticsView Google Analytics Statistics

      Bilkent University

      If you have trouble accessing this page and need to request an alternate format, contact the site administrator. Phone: (312) 290 2976
      © Bilkent University - Library IT

      Contact Us | Send Feedback | Off-Campus Access | Admin | Privacy