Show simple item record

dc.contributor.authorZafar, Salahuddin
dc.contributor.authorOsmanoğlu, Sinan
dc.contributor.authorÖztürk, Mustafa
dc.contributor.authorÇankaya, Büşra
dc.contributor.authorYılmaz, Doğan
dc.contributor.authorKashif, A. U.
dc.contributor.authorÖzbay, Ekmel
dc.coverage.spatialIslamabad, Pakistanen_US
dc.date.accessioned2021-03-03T11:24:41Z
dc.date.available2021-03-03T11:24:41Z
dc.date.issued2020
dc.identifier.isbn9781728146775
dc.identifier.issn2151-1403
dc.identifier.urihttp://hdl.handle.net/11693/75713
dc.descriptionDate of Conference: 14-18 January 2020en_US
dc.descriptionConference Name: 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020en_US
dc.description.abstractIn this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been investigated. LNA-1 and the first stage of LNA-2 is based on common source (CS) with inductive source degeneration topology. LNA-1 has a flat gain response of ±1.4 dB gain variation with a gain greater than 8 dB for 9 V drain voltage and 100 mA/mm drain current. Input return loss better than 9.8 dB and output return loss better than 12.8 dB have been achieved. The simulated value of noise figure for this design is less than 1.4 dB. In LNA-2 design, a two-stage topology is implemented to enhance amplifier's gain. The simulated values for LNA-2 show a gain greater than 16.8 dB with ±2.9 dB gain variation. Input and output return loss values are better than 8.8 dB and 10 dB, respectively. The value of noise figure for this design is less than 1.7 dB in the desired frequency range. Both designs, having state-of-the art small dimensions, are suitable for their potential applications for space communications, Radar, satellite communications etc.en_US
dc.language.isoEnglishen_US
dc.source.titleProceedings of the 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020en_US
dc.relation.isversionofhttps://dx.doi.org/10.1109/IBCAST47879.2020.9044569en_US
dc.subjectGallium Nitrideen_US
dc.subjectHEMTen_US
dc.subjectBroadbanden_US
dc.subjectFlat gainen_US
dc.subjectLNAen_US
dc.subjectMMICen_US
dc.subjectX-banden_US
dc.subjectSiCen_US
dc.titleGaN based LNA MMICs for X-band applicationsen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage699en_US
dc.citation.epage702en_US
dc.identifier.doi10.1109/IBCAST47879.2020.9044569en_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.contributor.bilkentauthorZafar, Salahuddin
dc.contributor.bilkentauthorOsmanoğlu, Sinan
dc.contributor.bilkentauthorÖztürk, Mustafa
dc.contributor.bilkentauthorÇankaya, Büşra
dc.contributor.bilkentauthorYılmaz, Doğan
dc.contributor.bilkentauthorÖzbay, Ekmel
dc.identifier.eisbn9781728146768
dc.identifier.eissn2151-1411
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record