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      GaN based LNA MMICs for X-band applications

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      Author(s)
      Zafar, Salahuddin
      Osmanoğlu, Sinan
      Öztürk, Mustafa
      Çankaya, Büşra
      Yılmaz, Doğan
      Kashif, A. U.
      Özbay, Ekmel
      Date
      2020
      Source Title
      Proceedings of the 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020
      Print ISSN
      2151-1403
      Electronic ISSN
      2151-1411
      Publisher
      Institute of Electrical and Electronics Engineers
      Pages
      699 - 702
      Language
      English
      Type
      Conference Paper
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      Abstract
      In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been investigated. LNA-1 and the first stage of LNA-2 is based on common source (CS) with inductive source degeneration topology. LNA-1 has a flat gain response of ±1.4 dB gain variation with a gain greater than 8 dB for 9 V drain voltage and 100 mA/mm drain current. Input return loss better than 9.8 dB and output return loss better than 12.8 dB have been achieved. The simulated value of noise figure for this design is less than 1.4 dB. In LNA-2 design, a two-stage topology is implemented to enhance amplifier's gain. The simulated values for LNA-2 show a gain greater than 16.8 dB with ±2.9 dB gain variation. Input and output return loss values are better than 8.8 dB and 10 dB, respectively. The value of noise figure for this design is less than 1.7 dB in the desired frequency range. Both designs, having state-of-the art small dimensions, are suitable for their potential applications for space communications, Radar, satellite communications etc.
      Keywords
      Gallium Nitride
      HEMT
      Broadband
      Flat gain
      LNA
      MMIC
      X-band
      SiC
      Permalink
      http://hdl.handle.net/11693/75713
      Published Version (Please cite this version)
      https://dx.doi.org/10.1109/IBCAST47879.2020.9044569
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Nanotechnology Research Center (NANOTAM) 1179
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