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      Accurate and process-tolerant resistive load

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      Author(s)
      Sütbaş, Batuhan
      Özbay, Ekmel
      Atalar, Abdullah
      Date
      2020
      Source Title
      IEEE Transactions on Microwave Theory and Techniques
      Print ISSN
      0018-9480
      Publisher
      IEEE
      Volume
      68
      Issue
      7
      Pages
      2495 - 2500
      Language
      English
      Type
      Article
      Item Usage Stats
      112
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      140
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      Abstract
      Resistive terminations cannot preserve high-quality matching at high frequencies due to the parasitic effects of the nonideal resistor. Moreover, resistance values of the termination resistors in integrated circuits are subject to process variations. Therefore, it is difficult to obtain accurate and process-tolerant terminations that are crucial for high performance in microwave circuits. We propose a new resistive network that compensates for the high-frequency parasitic effects of the resistors to improve the bandwidth of the termination. In addition to maintaining accuracy, the presented network provides tolerance to variation in the resistor values. The accuracy and tolerance of the proposed structure is analytically shown and experimentally verified by three test structures at the X-band fabricated on a GaN technology. The experimental results show that a small size and wideband 50-Ω load with a return loss better than 25 dB can be obtained, while the resistor value changes ±30%.
      Keywords
      Accurate
      Integrated circuit
      Parasitic effect
      Process–temperature variation
      Resistor
      Sheet resistance
      Termination
      Tolerance
      Via inductance
      Wideband
      Permalink
      http://hdl.handle.net/11693/75449
      Published Version (Please cite this version)
      https://dx.doi.org/10.1109/TMTT.2020.2986207
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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