Improved Tmax estimation in GaN HEMTs using an equivalent hot point approximation
Date
2020Source Title
IEEE Transactions on Electron Devices
Print ISSN
0018-9383
Publisher
IEEE
Volume
67
Issue
4
Pages
1553 - 1559
Language
English
Type
ArticleItem Usage Stats
24
views
views
23
downloads
downloads
Abstract
In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature (TMAX) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate TMAX more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods.
Keywords
2-D device simulationsAlGaN
Channel temperature
Finite-element analysis
Gallium nitride (GaN)
High-electron-mobility transistors (HEMTs)
Hot point
Selfheating
Technology computer-aided design (TCAD)
Thermal analysis
Thermal resistance