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      Improved Tmax estimation in GaN HEMTs using an equivalent hot point approximation

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      Author(s)
      Odabaşı, Oğuz
      Akar, Mehmet Ömer
      Bütün, Bayram
      Özbay, Ekmel
      Date
      2020
      Source Title
      IEEE Transactions on Electron Devices
      Print ISSN
      0018-9383
      Publisher
      IEEE
      Volume
      67
      Issue
      4
      Pages
      1553 - 1559
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature (TMAX) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate TMAX more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods.
      Keywords
      2-D device simulations
      AlGaN
      Channel temperature
      Finite-element analysis
      Gallium nitride (GaN)
      High-electron-mobility transistors (HEMTs)
      Hot point
      Selfheating
      Technology computer-aided design (TCAD)
      Thermal analysis
      Thermal resistance
      Permalink
      http://hdl.handle.net/11693/75440
      Published Version (Please cite this version)
      https://dx.doi.org/10.1109/TED.2020.2976030
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
      • Nanotechnology Research Center (NANOTAM) 1063
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