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      Hybrid J-Aggregate–graphene phototransistor

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      Author(s)
      Balcı, Osman
      Uzlu, Burkay
      Yakar, Ozan
      Polat, Nahit
      Ari, O.
      Tunç, İlknur
      Kocabaş, Coşkun
      Balcı, Sinan
      Date
      2020
      Source Title
      ACS Applied Nano Materials
      Print ISSN
      2574-0970
      Publisher
      American Chemical Society
      Volume
      3
      Issue
      1
      Pages
      409 - 417
      Language
      English
      Type
      Article
      Item Usage Stats
      446
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      232
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      Abstract
      J-aggregates are fantastic self-assembled chromophores with a very narrow and extremely sharp absorbance band in the visible and near-infrared spectrum, and hence they have found many exciting applications in nonlinear optics, sensing, optical devices, photography, and lasing. In silver halide photography, for example, they have enormously improved the spectral sensitivity of photographic process due to their fast and coherent energy migration ability. On the other hand, graphene, consisting of single layer of carbon atoms forming a hexagonal lattice, has a very low absorption coefficient. Inspired by the fact that J-aggregates have carried the role to sense the incident light in silver halide photography, we would like to use Jaggregates to increase spectral sensitivity of graphene in the visible spectrum. Nevertheless, it has been an outstanding challenge to place isolated J-aggregate films on graphene to extensively study interaction between them. We herein noncovalently fabricate isolated J-aggregate thin films on graphene by using a thin film fabrication technique we termed here membrane casting (MC). MC significantly simplifies thin film formation of water-soluble substances on any surface via porous polymer membrane. Therefore, we reversibly modulate the Dirac point of graphene in the J-aggregate/graphene van der Waals (vdW) heterostructure and demonstrate an all-carbon phototransistor gated by visible light. Owing to the hole transfer from excited excitonic thin film to graphene layer, graphene is hole-doped. In addition, spectral and power responses of the all-carbon phototransistor have been measured by using a tunable laser in the visible spectrum. The first integration of J-aggregates with graphene in a transistor structure enables one to reversibly write and erase charge doping in graphene with visible light that paves the way for using J-aggregate/graphene vdW heterostructures in optoelectronic applications.
      Keywords
      J-aggregates
      Graphene
      Frenkel exciton
      Membrane casting
      Field effect transistor
      Phototransistor
      Dirac point
      Optoelectronics
      Photodetector
      Permalink
      http://hdl.handle.net/11693/55100
      Published Version (Please cite this version)
      https://dx.doi.org/10.1021/acsanm.9b02039
      Collections
      • Department of Chemistry 707
      • Department of Physics 2551
      • Institute of Materials Science and Nanotechnology (UNAM) 2260
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