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      Scattering analysis of ultrathin barrier (<7 nm) GaN‑based heterostructures

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      Author(s)
      Narin, P.
      Arslan, Engin
      Öztürk, M.
      Öztürk, Mustafa
      Lisesivdin, S. B.
      Özbay, Ekmel
      Date
      2019
      Source Title
      Applied Physics A: Materials Science and Processing
      Print ISSN
      0947-8396
      Electronic ISSN
      1432-0630
      Publisher
      Springer
      Volume
      125
      Issue
      4
      Pages
      1 - 7
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      In this study, two-dimensional electron gas (2DEG) mobility analysis of AlN/GaN and InAlN/GaN structures with ultrathin barrier layers by metal organic chemical vapor deposition (MOCVD) has been performed with Hall efect measurements which is carried out under temperature from 15 to 350 K and a single magnetic feld of 0.5 T. As a result of the scattering analysis made with Matthiessen’s rule, it is shown that while the interface roughness scattering mechanism is dominated on the 2DEG mobility at low temperatures, the 2DEG mobility has been dominated by the polar optical phonon-scattering mechanism at high temperatures. Also, the acoustic phonon-scattering mechanism is efective on the 2DEG mobility at middle temperature. Furthermore, the interface and the quantum well parameters such as deformation potential, quantum well width, and correlation length of the interface are determined for each. As well as experimental measurements, the conduction band energy diagrams of the studied samples have been calculated using one-dimensional (1D) self-consistent Schrödinger–Poisson equations. A 2D quasitriangular quantum well formation has been shown for each studied samples. 2DEG probability density of samples has been investigated.
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      http://hdl.handle.net/11693/53440
      Published Version (Please cite this version)
      https://dx.doi.org/10.1007/s00339-019-2591-z
      Collections
      • Department of Electrical and Electronics Engineering 3863
      • Department of Physics 2485
      • Institute of Materials Science and Nanotechnology (UNAM) 2098
      • Nanotechnology Research Center (NANOTAM) 1125
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