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dc.contributor.authorErsan, Fatihen_US
dc.contributor.authorKeçik, Denizen_US
dc.contributor.authorÖzçelik, V. O.en_US
dc.contributor.authorKadıoğlu, Yeldaen_US
dc.contributor.authorÜzengi-Aktürk, O.en_US
dc.contributor.authorDurgun, Enginen_US
dc.contributor.authorAktürk, Ethemen_US
dc.contributor.authorÇıracı, Salimen_US
dc.date.accessioned2020-02-13T07:03:35Z
dc.date.available2020-02-13T07:03:35Z
dc.date.issued2019
dc.identifier.issn1931-9401
dc.identifier.urihttp://hdl.handle.net/11693/53326
dc.description.abstractSoon after the synthesis of two-dimensional (2D) ultrathin black phosphorus and fabrication of field effect transistors thereof, theoretical studies have predicted that other group-VA elements (or pnictogens), N, As, Sb, and Bi can also form stable, single-layer (SL) structures. These were nitrogene in a buckled honeycomb structure, arsenene, antimonene, and bismuthene in a buckled honeycomb, as well as washboard and square-octagon structures with unusual mechanical, electronic, and optical properties. Subsequently, theoretical studies are followed by experimental efforts that aim at synthesizing these novel 2D materials. Currently, research on 2D pnictogens has been a rapidly growing field revealing exciting properties, which offers diverse applications in flexible electronics, spintronics, thermoelectrics, and sensors. This review presents an evaluation of the previous experimental and theoretical studies until 2019, in order to provide input for further research attempts in this field. To this end, we first reviewed 2D, SL structures of group-VA elements predicted by theoretical studies with an emphasis placed on their dynamical and thermal stabilities, which are crucial for their use in a device. The mechanical, electronic, magnetic, and optical properties of the stable structures and their nanoribbons are analyzed by examining the effect of external factors, such as strain, electric field, and substrates. The effect of vacancy defects and functionalization by chemical doping through adatom adsorption on the fundamental properties of pnictogens has been a critical subject. Interlayer interactions in bilayer and multilayer structures, their stability, and tuning their physical properties by vertical stacking geometries are also discussed. Finally, our review is concluded by highlighting new research directions and future perspectives on the challenges in this emerging field.en_US
dc.language.isoEnglishen_US
dc.source.titleApplied Physics Reviewsen_US
dc.relation.isversionofhttps://dx.doi.org/10.1063/1.5074087en_US
dc.subjectSemiconductorsen_US
dc.subjectThermodynamic states and processesen_US
dc.subject2D materialsen_US
dc.subjectNanoribbonsen_US
dc.subjectElectronic structureen_US
dc.titleTwo-dimensional pnictogens: a review of recent progresses and future research directionsen_US
dc.typeReviewen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage021308-1en_US
dc.citation.epage021308-28en_US
dc.citation.volumeNumber6en_US
dc.citation.issueNumber2en_US
dc.identifier.doi10.1063/1.5074087en_US
dc.publisherAmerican Institute of Physicsen_US
dc.contributor.bilkentauthorErsan, Fatih
dc.contributor.bilkentauthorKeçik, Deniz
dc.contributor.bilkentauthorKadıoğlu, Yelda
dc.contributor.bilkentauthorDurgun, Engin
dc.contributor.bilkentauthorAktürk, Ethem
dc.contributor.bilkentauthorÇıracı, Salim


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