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      • Department of Electrical and Electronics Engineering
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      Investigation of a hybrid approach for normally-off GaN HEMTs using fluorine treatment and recess etch techniques

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      Author(s)
      Kurt, Gökhan
      Gülseren, Melisa Ekin
      Salkım, Gurur
      Ural, Sertaç
      Kayal, Ömer Ahmet
      Öztürk, Mustafa
      Bütün, Bayram
      Kabak, M.
      Özbay, Ekmel
      Date
      2019
      Source Title
      IEEE Journal of the Electron Devices Society
      Print ISSN
      2168-6734
      Publisher
      Institute of Electrical and Electronics Engineers Inc.
      Volume
      7
      Pages
      351 - 357
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (V th = +3.59 V) than those prepared with a GaN buffer (V th = +1.85 V).
      Keywords
      AlGaN
      Enhancement-mode
      Fluorine plasma implantation
      GaN
      HEMT
      Normally-off
      Recess etch
      Permalink
      http://hdl.handle.net/11693/53115
      Published Version (Please cite this version)
      https://dx.doi.org/10.1109/JEDS.2019.2899387
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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