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      Investigation of angstrom-thick aluminium oxide passivation layers to improve the gate lag performance of GaN HEMTs

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      Author(s)
      Gülseren, Melisa Ekin
      Kurt, Gökhan
      Ulusoy Ghobadi, Türkan Gamze
      Ghobadi, Amir
      Salkım, Gurur
      Öztürk, Mustafa
      Bütün, Bayram
      Özbay, Ekmel
      Date
      2019-07
      Source Title
      Materials Research Express
      Print ISSN
      2053-1591
      Electronic ISSN
      2053-1591
      Publisher
      IOP
      Volume
      6
      Issue
      9
      Pages
      19 - 8
      Language
      English
      Type
      Article
      Item Usage Stats
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      188
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      Abstract
      In this paper, we report an angstrom-thick atomic layer deposited (ALD) aluminum oxide (Al2O3) dielectric passivation layer for an AlGaN/GaN high electron mobility transistor (HEMT). Our results show a 55% improvement in the gate lag performance of the design and a decrease by half in interface state density upon coating with two cycles of ALD Al2O3. DC characteristics such as current density, threshold voltage, and leakage currents were maintained. ALD Al2O3 passivation layers with thicknesses up to 10 nm were investigated. XPS analyses reveal that the first ALD cycles are sufficient to passivate GaN surface traps. This study demonstrates that efficient passivation can be achieved in atomic-scale with dimensions much thinner than commonly used bulk layers.
      Keywords
      AlGaN
      Atomic layer deposition
      Dielectric
      GaN
      Gate lag
      HEMT
      Passivation
      Permalink
      http://hdl.handle.net/11693/53110
      Published Version (Please cite this version)
      https://dx.doi.org/10.1088/2053-1591/ab2f68
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Department of Physics 2550
      • Institute of Materials Science and Nanotechnology (UNAM) 2258
      • Nanotechnology Research Center (NANOTAM) 1179
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