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      A high gain and high efficiency 15 W X-Band GaN power amplifier MMIC

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      Author(s)
      Gürdal, Armağan
      Özipek, Ulaş
      Sütbaş, Batuhan
      Özbay, Ekmel
      Date
      2019
      Source Title
      2019 European Microwave Conference in Central Europe (EuMCE)
      Publisher
      IEEE
      Pages
      10 - 13
      Language
      English
      Type
      Conference Paper
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      Abstract
      An X-band microstrip power amplifier MMIC based on our 0.25 μm AlGaN/GaN on SiC process technology is presented in this work. Fabrication steps, HEMT structure and typical device performance are demonstrated. Design procedure of the three-stage power amplifier MMIC with a compact size of 4.7 mm × 2.7 mm is described. Small-signal measurements of the fabricated MMICs typically show 36 dB gain with 5 dB ripple and input/output return losses better than 16 dB and 7 dB from 8.5 GHz to 12 GHz band, respectively. Typical output power of 15 W at 6 dB compression with 37%-44% power added efficiency is achieved under pulsed operation. MMIC power measurements performed at different base plate temperatures and bias conditions are also provided. This design exhibits significantly higher gain and much better input return loss compared to MMICs in the literature with similar size, efficiency and output power parameters.
      Keywords
      Gallium nitride
      Source-connected field plate
      HEMT
      X-band
      MMIC
      Power amplifier
      Permalink
      http://hdl.handle.net/11693/52796
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Nanotechnology Research Center (NANOTAM) 1179
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