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      A 6-18 GHz GaN power amplifier MMIC with high gain and high output power density

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      Author(s)
      Sütbaş, Batuhan
      Özipek, Ulaş
      Gürdal, A.
      Özbay, Ekmel
      Date
      2019
      Source Title
      2019 European Microwave Conference in Central Europe (EuMCE)
      Publisher
      IEEE
      Pages
      2 - 5
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      A three-stage reactively-matched 6-18 GHz power amplifier MMIC design is presented. The design effort is focused on obtaining a low-loss output matching network for a high output power density. Active unit cells consist of an 8×125 μm transistor stabilized with a symmetrical parallel RC circuit. The wideband amplifier is fabricated using our in-house 0.25 μm GaN on SiC HEMT process. The fabrication technology details and overall device performance are reported. Experimental results show that the MMIC has a minimum gain of 22 dB and a maximum gain of 26.5 dB across the operation band. An average output power density higher than 3.3W/mm with an associated average power-added efficiency of 22.5% is achieved. The MMIC demonstrates output power greater than 9.5 W at the center frequency. This design is distinguished from recent studies with its low-ripple high gain and high output power density.
      Keywords
      Wideband
      Gallium nitride
      Silicon carbide
      HEMT
      Reactive-matching
      High power amplifier
      MMIC
      Permalink
      http://hdl.handle.net/11693/52795
      Collections
      • Department of Electrical and Electronics Engineering 4011
      • Nanotechnology Research Center (NANOTAM) 1179
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