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dc.contributor.authorOsmanoğlu, Sinanen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialPrague, Czech Republicen_US
dc.date.accessioned2020-01-24T06:24:22Z
dc.date.available2020-01-24T06:24:22Z
dc.date.issued2019
dc.identifier.isbn9782874870675
dc.identifier.urihttp://hdl.handle.net/11693/52791
dc.descriptionDate of Conference: 13-15 May 2019en_US
dc.descriptionConference name:European Microwave Conference in Central Europe (EuMCE), Proceedings of the 1st European Microwave Conference in Central Europeen_US
dc.description.abstractThis paper describes the design results and measured performance of three different high power, low loss and high isolation GaN high electron mobility transistor (HEMT) based single-pole double-throw (SPDT) RF switches. Three different topologies were employed to design the proposed switches. The SPDT MMIC switches were developed with coplanar waveguide (CPW) GaN-HEMT technology to operate in X-Band. The measured performance showed that the switches have typical insertion loss of better than 2 dB, higher than 30 dB isolation with better than 10 dB return losses.en_US
dc.language.isoEnglishen_US
dc.source.title2019 European Microwave Conference in Central Europe (EuMCE)en_US
dc.subjectCoplanar waveguideen_US
dc.subjectGaNen_US
dc.subjectHigh poweren_US
dc.subjectMMICen_US
dc.subjectRF switchen_US
dc.subjectSPDTen_US
dc.subjectX-Banden_US
dc.titleX-band high power GaN SPDT MMIC RF switchesen_US
dc.typeConference Paperen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.citation.spage83en_US
dc.citation.epage86en_US
dc.publisherIEEEen_US
dc.contributor.bilkentauthorOsmanoğlu, Sinan
dc.contributor.bilkentauthorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828en_US


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