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      •   BUIR Home
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      • Bilkent Theses
      • Theses - Department of Electrical and Electronics Engineering
      • Dept. of Electrical and Electronics Engineering - Master's degree
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      Design, fabrication, and characterization of normally-off GaN HEMTS

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      Author(s)
      Gülseren, Melisa Ekin
      Advisor
      Özbay, Ekmel
      Date
      2019-07
      Publisher
      Bilkent University
      Language
      English
      Type
      Thesis
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      Abstract
      GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon based power devices owing to the superior material properties of GaN such as high-electric breakdown field, high-electron saturation velocity, and high mobility. Normally-off GaN HEMT devices are particularly significant in power electronics applications. In this thesis, a comprehensive study of normally-off high-electron-mobility transistors is presented, including theoretical background review, theoretical analysis, physically-based device simulations, device fabrication and optimization and electrical characterization. p-GaN gate InAlN/GaN HEMT and recessed AlGaN/GaN MISHEMT devices have been successfully demonstrated.
      Keywords
      HEMT
      GaN
      InAlN
      Normally-off
      Power electronics
      Threshold voltage
      Atomic layer deposition
      Alumina
      Recess etch
      Fluorine treatement
      p-GaN
      Permalink
      http://hdl.handle.net/11693/52291
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      • Dept. of Electrical and Electronics Engineering - Master's degree 655
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