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dc.contributor.authorBozkurt-Oruc, F.en_US
dc.contributor.authorOzgit-Akgun, C.en_US
dc.contributor.authorDonmez, İ.en_US
dc.contributor.authorBıyıklı, N.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.coverage.spatialDresden, Germanyen_US
dc.date.accessioned2019-07-09T05:57:59Z
dc.date.available2019-07-09T05:57:59Z
dc.date.issued2012en_US
dc.identifier.urihttp://hdl.handle.net/11693/52152
dc.descriptionDate of Conference: 17-20 June 2012en_US
dc.language.isoEnglishen_US
dc.source.title12th International Conference on Atomic Layer Deposition (ALD 2012)en_US
dc.titleGaN-based thin-film-transistor structures grown by low-temperature plasma-enhancedatomic layer depositionen_US
dc.typeConference Paperen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.contributor.bilkentauthorOkyay, Ali Kemal


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