Electronic and optical properties of atomic layer-deposited ZnO and TiO2
Date
2018Source Title
Journal of Electronic Materials
Print ISSN
0361-5235
Electronic ISSN
1543-186X
Publisher
Springer New York LLC
Volume
47
Issue
8
Pages
4508 - 4514
Language
English
Type
ArticleItem Usage Stats
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Abstract
Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.