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      • Department of Electrical and Electronics Engineering
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      Electronic and optical properties of atomic layer-deposited ZnO and TiO2

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      Author(s)
      Ates, H.
      Bolat, S.
      Oruc, F.
      Okyay, Ali Kemal
      Date
      2018
      Source Title
      Journal of Electronic Materials
      Print ISSN
      0361-5235
      Electronic ISSN
      1543-186X
      Publisher
      Springer New York LLC
      Volume
      47
      Issue
      8
      Pages
      4508 - 4514
      Language
      English
      Type
      Article
      Item Usage Stats
      217
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      257
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      Abstract
      Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.
      Keywords
      Zinc oxide
      Titanium oxide
      Atomic layer deposition
      Thin film transistor
      Semiconductor
      Permalink
      http://hdl.handle.net/11693/50524
      Published Version (Please cite this version)
      https://doi.org/10.1007/s11664-018-6373-8
      Collections
      • Department of Electrical and Electronics Engineering 4012
      • Nanotechnology Research Center (NANOTAM) 1179
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