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      Negative differential resistance observation and a new fitting model for electron drift velocity in GaN-based heterostructures

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      Author
      Atmaca, G.
      Narin, P.
      Kutlu, E.
      Malin, T. V.
      Mansurov, V. G.
      Zhuravlev, K. S.
      Lişesivdin, S. B.
      Özbay, Ekmel
      Date
      2018
      Source Title
      IEEE Transactions on Electron Devices
      Print ISSN
      0018-9383
      Publisher
      Institute of Electrical and Electronics Engineers
      Volume
      65
      Issue
      3
      Pages
      950 - 956
      Language
      English
      Type
      Article
      Item Usage Stats
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      Abstract
      The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al0.3Ga0.7N/AlN/GaN heterostructures without and with in situ Si3N4 passivation. The nanosecond-pulsed current-voltage ( {I}-{V} ) measurements were performed using a 20-ns applied pulse. Electron drift velocity depending on the electric field was obtained from the {I}-{V} measurements. These measurements show that a reduction in peak electron velocity from \text {2.01} \times \text {10}^{\text {7}} to \text {1.39} \times \text {10}^{\text {7}} cm/s after in situ Si3N4 passivation. Also, negative differential resistance regime was observed which begins at lower fields with the implementation of in situ Si3N4 passivation. In our samples, the electric field dependence of drift velocity was measured over 400 kV/cm due to smaller sample lengths. Then, a well-known fitting model was fitted to our experimental results. This fitting model was improved in order to provide an adequate description of the field dependence of drift velocity. It gives reasonable agreement with the experimental drift velocity data up to 475 kV/cm of the electric field and could be used in the device simulators.
      Keywords
      2-dimensional electron gas (2DEG)
      AlGaN
      Drift velocity
      Gallium nitride (GaN)
      Negative differential resistivity (NDR)
      SiN passivation
      Permalink
      http://hdl.handle.net/11693/50256
      Published Version (Please cite this version)
      https://doi.org/10.1109/TED.2018.2796501
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Nanotechnology Research Center (NANOTAM) 1006
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