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      Effect of gate structures on the DC and RF performance of AlGaN/GaN HEMTs

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      Author
      Toprak A.
      Osmanoǧlu, S.
      Öztürk, M.
      Yılmaz, D.
      Cengiz, Ö.
      Şen, Ö.
      Bütün, B.
      Özcan, Ş.
      Özbay, Ekmel
      Date
      2018
      Source Title
      Semiconductor Science and Technology
      Print ISSN
      0268-1242
      Publisher
      Institute of Physics Publishing
      Volume
      33
      Issue
      12
      Pages
      1 - 7
      Language
      English
      Type
      Article
      Item Usage Stats
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      151
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      Abstract
      This work analyzes the effect of various gate structures on the DC and radio frequency (RF) performance of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMT devices with a 3 μm drain-to-source spacing, 125 μm gate width and 0.3 μm gate length in various gate structures were fabricated to achieve the desired frequency response with a robust, high yield, and repeatable process. The maximum drain current (IDS,max), maximum DC transconductance (gm), pinch-off voltage (Vth), current-gain cutoff frequency (fT), maximum oscillation frequency (fmax), and RF characteristics of the devices in terms of the small-signal gain and RF output power (Pout) at 8 GHz were investigated. The results showed that the output power is increased by 1 dB when the gate structure is changed from field plate to gamma gate. The Vth, gm, fT and fmax values are maximized when the thickness of the passivation layer between the gate foot and the gate head is minimized. It is shown that the IDS,max is decreased and Pout is increased when the gate recess etching process is performed.
      Keywords
      AlGaN
      Field plate
      Gamma gate
      GaN
      High-electron mobility transistor (HEMT)
      Recessed gate
      Permalink
      http://hdl.handle.net/11693/50124
      Published Version (Please cite this version)
      https://doi.org/10.1088/1361-6641/aaebab
      Collections
      • Department of Electrical and Electronics Engineering 3524
      • Department of Physics 2299
      • Institute of Materials Science and Nanotechnology (UNAM) 1775
      • Nanotechnology Research Center (NANOTAM) 1006
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