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dc.contributor.authorZhu B.en_US
dc.contributor.authorZhang Z.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorLu S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorKang, X.en_US
dc.contributor.authorWang, N.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2019-02-21T16:01:57Z
dc.date.available2019-02-21T16:01:57Z
dc.date.issued2018-04en_US
dc.identifier.issn1386-9477
dc.identifier.urihttp://hdl.handle.net/11693/49942
dc.language.isoEnglish
dc.source.titlePhysica E: Low-Dimensional Systems and Nanostructuresen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.physe.2017.12.025
dc.titleEffect of Mg doping in the barriers on the electrical performance of InGaN/GaN-based light-emitting diodesen_US
dc.typeArticleen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.citation.spage29en_US
dc.citation.epage32en_US
dc.citation.volumeNumber98en_US
dc.identifier.doi10.1016/j.physe.2017.12.025
dc.publisherElsevier B. V.
dc.contributor.bilkentauthorDemir, Hilmi Volkan
dc.embargo.release2020-04-01en_US
dc.identifier.eissn1873-1759en_US


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