dc.contributor.advisor | Özbay, Ekmel | |
dc.contributor.author | Özipek, Ulaş | |
dc.date.accessioned | 2019-02-21T11:39:26Z | |
dc.date.available | 2019-02-21T11:39:26Z | |
dc.date.copyright | 2019-02 | |
dc.date.issued | 2019-02 | |
dc.date.submitted | 2019-02-20 | |
dc.identifier.uri | http://hdl.handle.net/11693/49637 | |
dc.description | Cataloged from PDF version of article. | en_US |
dc.description | Thesis (M.S.) : Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2019. | en_US |
dc.description | Includes bibliographical references (leaves 75-78). | en_US |
dc.description.abstract | RF power amplifiers are crucial components of modern radar and communication
systems. However, their design poses some challenges due to device limitations in
high power and high frequency regime, as well as inherent difficulties of designing
for nonlinear large-signal device operation. Gallium Nitride (GaN) based High
Electron Mobility Transistors (HEMT) are promising candidates due to their
superior material qualities, high power densities and ability to operate up to
mm-wave frequencies.
In this thesis, 0.25 μm GaN on SiC microfabrication process of Bilkent University
Nanotechnology Research Center (NANOTAM) is presented. Transistor
characterization procedure is demonstrated. Ideal transistor layout for design
goals is selected and the transistor gate structure is optimized for X-band performance.
A model library for microstrip passive circuit elements based on electromagnetic
simulations has been developed. Finally, design and measurements
of an X-band microstrip Class AB two-stage Monolithic Microwave Integrated
Circuit (MMIC) PA, based on the same process are presented in detail.
With die sizes smaller than 4.3 mm by 2.3 mm, fabricated MMICs operate at
8.5 - 11.5 GHz band with 24 dB small-signal gain. More than 13.5 W (41.3 dBm)
output power (P6dB) and 31 - 38 % power-added efficiency are achieved throughout
the 8.5 - 11 GHz band in pulsed mode on-wafer measurements. | en_US |
dc.description.statementofresponsibility | by Ulaş Özipek | en_US |
dc.format.extent | xvi, 78 leaves : illustrations, charts (some color) ; 30 cm. | en_US |
dc.language.iso | English | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | MMIC | en_US |
dc.subject | Microwave | en_US |
dc.subject | X-band | en_US |
dc.subject | Power amplifier | en_US |
dc.title | Design of an X-band GaN based microstrip MMIC power amplifier | en_US |
dc.title.alternative | X-bant GaN tabanlı mikroşerit MMIC güç yükselteci | en_US |
dc.type | Thesis | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.publisher | Bilkent University | en_US |
dc.description.degree | M.S. | en_US |
dc.identifier.itemid | B159708 | |