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      The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures

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      Author(s)
      Lişesivdin, S. B.
      Yıldız, A.
      Acar, S.
      Kasap, M.
      Özçelik, S.
      Özbay, Ekmel
      Date
      2007-11-01
      Source Title
      Physica B: Condensed Matter
      Print ISSN
      0921-4526
      Electronic ISSN
      1873-2135
      Publisher
      Elsevier BV * North-Holland
      Volume
      399
      Issue
      2
      Pages
      132 - 137
      Language
      English
      Type
      Article
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      Abstract
      The two-dimensional electron gas (2DEG) transport properties of two-step growth undoped Al0.25Ga0.75N/GaN heterostructures with semi-insulating buffer, grown by MOCVD, were investigated in a temperature range of 20–350 K. Using the quantitative mobility spectrum analysis (QMSA) method, it was shown that significant parallel conduction does not occur in worked structures. In-plain growth axis strains are calculated using the total polarization-induced charge density taken as the sheet carrier density measured from the Hall effect. It was found that the calculated strain values are in good agreement with those reported. Influences of the two-step growth parameters such as growth ramp time, the annealing temperature of the GaN nucleation layer on the mobility, and density of the 2DEG are also discussed.
      Keywords
      AlGaN/GaN
      Heterostructure
      Strain
      QMSA
      MOCVD
      Permalink
      http://hdl.handle.net/11693/49094
      Published Version (Please cite this version)
      https://doi.org/10.1016/j.physb.2007.05.036
      Collections
      • Department of Electrical and Electronics Engineering 3702
      • Department of Physics 2397
      • Institute of Materials Science and Nanotechnology (UNAM) 1930
      • Nanotechnology Research Center (NANOTAM) 1063
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