Show simple item record

dc.contributor.authorDhar, J.en_US
dc.contributor.authorSalzner, U.en_US
dc.contributor.authorPatil, S.en_US
dc.date.accessioned2018-04-12T13:50:04Z
dc.date.available2018-04-12T13:50:04Z
dc.date.issued2017en_US
dc.identifier.issn2050-7534
dc.identifier.urihttp://hdl.handle.net/11693/38176
dc.description.abstractIn recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new π-conjugated materials has resulted in the demonstration of several practical devices, particularly in displays and photoreceptors. However, applications of organic semiconductors in bipolar junction devices, e.g. rectifiers and inverters, are limited due to an imbalance in charge transport. The performance of p-channel organic semiconducting materials exceeds that of electron transport. In addition, electron transport in π-conjugated materials exhibits poorer atmospheric stability and dispersive transient photocurrents due to extrinsic carrier trapping. Thus development of air stable n-channel conjugated materials is required. New classes of materials with delocalized n-doped states are under development, aiming at improvement of the electron transport properties of organic semiconductors. In this review, we highlight the basic tenets related to the stability of n-channel organic semiconductors, primarily focusing on the thermodynamic stability of anions and summarizing the recent progress in the development of air stable electron transporting organic semiconductors. Molecular design strategies are analysed with theoretical investigations.en_US
dc.language.isoEnglishen_US
dc.source.titleJournal of Materials Chemistry Cen_US
dc.relation.isversionofhttp://dx.doi.org/10.1039/c6tc05467fen_US
dc.subjectAtmospheric movementsen_US
dc.subjectDisplay devicesen_US
dc.subjectDoping (additives)en_US
dc.subjectElectron transport propertiesen_US
dc.subjectElectronsen_US
dc.subjectFlexible electronicsen_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectRectifying circuitsen_US
dc.subjectThermodynamic stabilityen_US
dc.subjectAtmospheric stabilityen_US
dc.subjectElectron transportingen_US
dc.subjectN-channel organic semiconductorsen_US
dc.subjectOrganic semiconducting materialsen_US
dc.subjectPi-conjugated materialsen_US
dc.subjectTechnological innovationen_US
dc.subjectTheoretical investigationsen_US
dc.subjectTransient photocurrentsen_US
dc.subjectField effect transistorsen_US
dc.titleTrends in molecular design strategies for ambient stable n-channel organic field effect transistorsen_US
dc.typeReviewen_US
dc.departmentDepartment of Chemistryen_US
dc.citation.spage7404en_US
dc.citation.epage7430en_US
dc.citation.volumeNumber5en_US
dc.citation.issueNumber30en_US
dc.identifier.doi10.1039/c6tc05467fen_US
dc.publisherRoyal Society of Chemistryen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record