Trends in molecular design strategies for ambient stable n-channel organic field effect transistors
Author
Dhar, J.
Salzner, U.
Patil, S.
Date
2017Source Title
Journal of Materials Chemistry C
Print ISSN
2050-7534
Publisher
Royal Society of Chemistry
Volume
5
Issue
30
Pages
7404 - 7430
Language
English
Type
ReviewItem Usage Stats
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Abstract
In recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new π-conjugated materials has resulted in the demonstration of several practical devices, particularly in displays and photoreceptors. However, applications of organic semiconductors in bipolar junction devices, e.g. rectifiers and inverters, are limited due to an imbalance in charge transport. The performance of p-channel organic semiconducting materials exceeds that of electron transport. In addition, electron transport in π-conjugated materials exhibits poorer atmospheric stability and dispersive transient photocurrents due to extrinsic carrier trapping. Thus development of air stable n-channel conjugated materials is required. New classes of materials with delocalized n-doped states are under development, aiming at improvement of the electron transport properties of organic semiconductors. In this review, we highlight the basic tenets related to the stability of n-channel organic semiconductors, primarily focusing on the thermodynamic stability of anions and summarizing the recent progress in the development of air stable electron transporting organic semiconductors. Molecular design strategies are analysed with theoretical investigations.
Keywords
Atmospheric movementsDisplay devices
Doping (additives)
Electron transport properties
Electrons
Flexible electronics
Organic field effect transistors
Rectifying circuits
Thermodynamic stability
Atmospheric stability
Electron transporting
N-channel organic semiconductors
Organic semiconducting materials
Pi-conjugated materials
Technological innovation
Theoretical investigations
Transient photocurrents
Field effect transistors