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      Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions

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      Author(s)
      Deminskyi, Petro
      Haider, Ali
      Bıyıklı, Necmi
      Ovsianitsky, A.
      Tsymbalenko, A.
      Kotov, D.
      Matkivskyi, V.
      Liakhova, N.
      Osinsky, V.
      Date
      2016
      Source Title
      2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
      Publisher
      IEEE
      Pages
      128 - 131
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      325
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      Abstract
      The paper consider oxygen contamination of HCPA ALD grown GaN films under an air conditioning and during different time duration. High resolution XPS analysis of HCPA ALD grown GaN films after diluted 1:10 HF(41 %) : H2O and undiluted HF (41 %) influence on oxygen impurities was investigated. Lesser oxygen impurities have been observed. Better resistivity to oxygen atoms of GaN thin films after diluted HF solution treatment was achieved compared to undiluted HF treatment and without treatment.
      Keywords
      Contamination
      GaN
      HCPA ALD
      Oxygen
      Thin films
      Air conditioning
      Contamination
      Gallium nitride
      Hydrofluoric acid
      Nanotechnology
      Oxide films
      Oxygen
      GaN thin films
      HCPA ALD
      HF treatment
      High resolution
      Native oxides
      Oxygen contamination
      Oxygen impurity
      Time duration
      Thin films
      Permalink
      http://hdl.handle.net/11693/37747
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/ELNANO.2016.7493029
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      • Institute of Materials Science and Nanotechnology (UNAM) 2260
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