Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO)
132 - 134
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GaN thin films grown by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) at two different substrate temperatures (250 and 450 °C) are compared. Effect of two different Ga source materials named as trimethylgallium (TMG) and triethylgallium (TEG) on GaN growth and film quality is also investigated and reviewed. Films were characterized by X-ray photoelectron spectroscopy, spectroscopic ellipsometery, and grazing incidence X-ray diffraction. GaN film deposited by TMG revealed better structural, chemical, and optical properties in comparison with GaN film grown with TEG precursor. When compared on basis of different substrate temperature, GaN films grown at higher substrate temperature revealed better structural and optical properties.
KeywordsAtomic layer deposition
Low temperature growth
Pulsed laser deposition
X ray diffraction
X ray photoelectron spectroscopy
Grazing incidence x-ray diffraction
Low temperature growth
Structural and optical properties
Atomic layer deposition
Published Version (Please cite this version)http://dx.doi.org/10.1109/ELNANO.2016.7493030
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