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      Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance

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      Author(s)
      Bosi G.
      Raffo A.
      Vadalà V.
      Trevisan F.
      Vannini G.
      Cengiz, Ömer
      Şen, Özlem
      Özbay, Ekmel
      Date
      2016
      Source Title
      2016 11th European Microwave Integrated Circuits Conference (EuMIC)
      Publisher
      IEEE
      Pages
      41 - 44
      Language
      English
      Type
      Conference Paper
      Item Usage Stats
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      Abstract
      In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.
      Keywords
      GaN
      HEMT
      measurements
      semiconductor devices
      Electron devices
      Measurements
      Microwave devices
      Microwave integrated circuits
      Microwaves
      Semiconductor devices
      Device performance
      Evaluation phase
      Low-frequency
      Microwave transistors
      New components
      Time domain characterizations
      High electron mobility transistors
      Permalink
      http://hdl.handle.net/11693/37743
      Published Version (Please cite this version)
      http://dx.doi.org/10.1109/EuMIC.2016.7777484
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      • Nanotechnology Research Center (NANOTAM) 1179
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