Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Institute of Electrical and Electronics Engineers Inc.
41 - 44
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In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.
Microwave integrated circuits
Time domain characterizations
High electron mobility transistors
Published Version (Please cite this version)http://dx.doi.org/10.1109/EuMIC.2016.7777484
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