Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
Date
2016
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Abstract
In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.
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2016 11th European Microwave Integrated Circuits Conference (EuMIC)
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IEEE
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Keywords
GaN, HEMT, measurements, semiconductor devices, Electron devices, Measurements, Microwave devices, Microwave integrated circuits, Microwaves, Semiconductor devices, Device performance, Evaluation phase, Low-frequency, Microwave transistors, New components, Time domain characterizations, High electron mobility transistors
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English