Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
2016 11th European Microwave Integrated Circuits Conference (EuMIC)
41 - 44
Item Usage Stats
MetadataShow full item record
In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.
Microwave integrated circuits
Time domain characterizations
High electron mobility transistors
Published Version (Please cite this version)http://dx.doi.org/10.1109/EuMIC.2016.7777484
Showing items related by title, author, creator and subject.
Malekghasemi, S.; Kahveci, E.; Duman, M. (Elsevier B.V., 2016)A major application of microfluidic paper-based analytical devices (µPADs) includes the field of point-of-care (POC) diagnostics. It is important for POC diagnostics to possess properties such as ease-of-use and low cost. ...
Bıyıklı, Necmi; Damgaci, Y.; Cetiner, B.A. (2009)The fabrication and characterisation of a double-arm cantilever-type metallic DC-contact MEMS actuator with low pull-down voltage are reported. Bi-layer TiW cantilevers with an internal stress gradient were fabricated using ...
Celik, M.; Atalar, Abdullah; Tan, M. A. (Institute of Electrical and Electronics Engineers, 1996-12)We propose a new method for the steady state analysis of periodically excited nonlinear microwave circuits. It is a modified and more efficient form of Newton-Raphson iteration based harmonic balance (HB) technique. It ...