Low-frequency time-domain characterization for fast and reliable evaluation of microwave transistor performance
Date
2016Source Title
2016 11th European Microwave Integrated Circuits Conference (EuMIC)
Publisher
IEEE
Pages
41 - 44
Language
English
Type
Conference PaperItem Usage Stats
229
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219
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Abstract
In this paper, we introduce the use of the low-frequency characterization of electron devices as an accurate and economical way to fast gather consistent data about the electron device performance at microwaves in the evaluation phase of new components, technologies and processes. © 2016 European Microwave Association.
Keywords
GaNHEMT
measurements
semiconductor devices
Electron devices
Measurements
Microwave devices
Microwave integrated circuits
Microwaves
Semiconductor devices
Device performance
Evaluation phase
Low-frequency
Microwave transistors
New components
Time domain characterizations
High electron mobility transistors
Permalink
http://hdl.handle.net/11693/37743Published Version (Please cite this version)
http://dx.doi.org/10.1109/EuMIC.2016.7777484Collections
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