On-chip characterization of THz Schottky diodes using non-contact probes
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
IEEE Computer Society
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We present non-contact characterization of GaAs Schottky contacts in the 140-220 GHz band. The non-contact probing technique utilizes planar on-chip antennas that are monolithically integrated with the coplanar waveguide environment housing the Schottky diode under test. The diode contact is fabricated through a 6 mask lithographic process with a 5 μm deep-trench under the contact to minimize parasitics and extend operation into the THz band. A quasi-optical link between the VNA ports and on-chip probe antennas enables efficient signal coupling into the test device. The non-contact probe station is calibrated using on-chip quick-offset-short method and the effectiveness of this approach is demonstrated for integrated diodes for under various bias conditions.
Schottky barrier diodes